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MJE13003-R Datasheet, Unisonic Technologies

MJE13003-R transistor equivalent, npn silicon transistor.

MJE13003-R Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 363.58KB)

MJE13003-R Datasheet
MJE13003-R Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 363.58KB)

MJE13003-R Datasheet

Features and benefits

* Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C. * 700V blocking capability

Application

in switch mode.
* FEATURES * Reverse biased SOA with inductive load @ TC=100°C * Inductive switching matrix 0.5 ~ 1..

Description

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.
* FEATURES * Reverse biased SOA with inductive load.

Image gallery

MJE13003-R Page 1 MJE13003-R Page 2 MJE13003-R Page 3

TAGS

MJE13003-R
NPN
SILICON
TRANSISTOR
Unisonic Technologies

Manufacturer


Unisonic Technologies

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